Passivation of GaAs surface by atomic-layer-deposited titanium nitride
نویسندگان
چکیده
The suitability of titaniumnitride (TiN) for GaAs surface passivation and protection is investigated. A 2–6nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 C on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer. TiN passivation does not affect the surfacemorphology of the samples, but increases significantly the photoluminescence intensity and carrier lifetime of theNSQWs, and also provides long-term protection of the sample surface. This study shows that ALD TiN coating is a promising low-temperature method for ex situ GaAs surface passivation. 2008 Elsevier B.V. All rights reserved.
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